Photoluminescence due to positively charged excitons in undoped GaAs/AlxGa1-xAs quantum T wells

被引:59
作者
Osborne, JL [1 ]
Shields, AJ [1 ]
Pepper, M [1 ]
Bolton, FM [1 ]
Ritchie, DA [1 ]
机构
[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND
来源
PHYSICAL REVIEW B | 1996年 / 53卷 / 19期
关键词
D O I
10.1103/PhysRevB.53.13002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the photoluminescence (PL) spectra of nominally undoped GaAs/Al0.33Ga0.67As quantum wells, as a function of well width, temperature, excitation energy, and intensity, and an applied magnetic field. A doublet is observed for temperatures below 10 K, whose components we demonstrate derive from the neutral (X) and positively charged (X(+)) excitons. The latter appears due to the binding of excitons to holes in the quantum well originating from the background concentration of acceptors in the Al0.33Ga0.67As barriers. Our assignment of X(+) is motivated by the striking similarity of the PL spectra to those recorded on quantum wells with acceptors deliberately incorporated in the barriers. Consistent with our assignment, we see a strengthening of the X(+) transition when more holes are introduced into the well by photoexcitation. The dependence of the doublet splitting on well width is in close agreement with a Monte Carlo calculation of the second hole binding energy in X(+). The PL peak due to X(+) may have been falsely ascribed in previous work to a biexciton.
引用
收藏
页码:13002 / 13010
页数:9
相关论文
共 28 条
  • [1] ADACHI S, 1993, PROPERTIES ALUMINIUM, P289
  • [2] RADIATIVE LIFETIME OF FREE-EXCITONS IN QUANTUM-WELLS
    ANDREANI, LC
    TASSONE, F
    BASSANI, F
    [J]. SOLID STATE COMMUNICATIONS, 1991, 77 (09) : 641 - 645
  • [3] OPTICAL INVESTIGATION OF BIEXCITONS AND BOUND EXCITONS IN GAAS QUANTUM WELLS
    CHARBONNEAU, S
    STEINER, T
    THEWALT, MLW
    KOTELES, ES
    CHI, JY
    ELMAN, B
    [J]. PHYSICAL REVIEW B, 1988, 38 (05): : 3583 - 3586
  • [4] RADIATIVE LIFETIMES OF EXCITONS IN QUANTUM-WELLS - LOCALIZATION AND PHASE-COHERENCE EFFECTS
    CITRIN, DS
    [J]. PHYSICAL REVIEW B, 1993, 47 (07): : 3832 - 3841
  • [5] ELECTRON-TRANSPORT ACROSS A WIDE ALGAAS BARRIER
    DANIELS, ME
    BISHOP, PJ
    JENSEN, KO
    RIDLEY, BK
    RITCHIE, DA
    GRIMSHAW, M
    LINFIELD, EH
    JONES, GAC
    SMITH, GW
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (09) : 5606 - 5621
  • [6] DENSITY-DEPENDENT EXCITON RADIATIVE LIFETIMES IN GAAS QUANTUM-WELLS
    ECCLESTON, R
    FEUERBACHER, BF
    KUHL, J
    RUHLE, WW
    PLOOG, K
    [J]. PHYSICAL REVIEW B, 1992, 45 (19): : 11403 - 11406
  • [7] OPTICAL SPECTROSCOPY OF A 2-DIMENSIONAL ELECTRON-GAS NEAR THE METAL-INSULATOR-TRANSITION
    FINKELSTEIN, G
    SHTRIKMAN, H
    BARJOSEPH, I
    [J]. PHYSICAL REVIEW LETTERS, 1995, 74 (06) : 976 - 979
  • [8] OBSERVATION OF THE ACCEPTOR-BOUND EXCITON CONFINED IN NARROW GAAS/ALXGA1-XAS QUANTUM WELLS IN PHOTOLUMINESCENCE EXCITATION
    HOLTZ, PO
    SUNDARAM, M
    MERZ, JL
    GOSSARD, AC
    [J]. PHYSICAL REVIEW B, 1989, 40 (14): : 10021 - 10024
  • [9] THEORY OF THE CONTRIBUTION OF EXCITONS TO THE COMPLEX DIELECTIC CONSTANT OF CRYSTALS
    HOPFIELD, JJ
    [J]. PHYSICAL REVIEW, 1958, 112 (05): : 1555 - 1567
  • [10] OBSERVATION OF NEGATIVELY CHARGED EXCITONS X- IN SEMICONDUCTOR QUANTUM-WELLS
    KHENG, K
    COX, RT
    DAUBIGNE, YM
    BASSANI, F
    SAMINADAYAR, K
    TATARENKO, S
    [J]. PHYSICAL REVIEW LETTERS, 1993, 71 (11) : 1752 - 1755