Surface free energy and wettability of silyl layers on silicon determined from contact angle hysteresis

被引:81
作者
Chibowski, EJ [1 ]
机构
[1] Marie Curie Sklodowska Univ, Fac Chem, Dept Phys Chem Interfacial Phenomena, PL-20031 Lublin, Poland
关键词
silyl layers; surface free energy;
D O I
10.1016/j.cis.2005.01.005
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using the literature data [A.Y Fadeev and T.J. McCarthy, Langmuir 15 (1999) 3759; A.Y Fadeev and T.J. McCarthy, Langmuir 16 (2000) 7268] of the advancing and receding contact angles for water, diiodomethane and hexadecane measured on various hydrophobic silyl layers (mostly monolayers) produced on silicon wafers the apparent surface free energies y(s)(tot) were calculated by applying new model of the contact angle hysteresis interpretation. It was found that, for the same silyl layer, the calculated y(s)(tot) values to some degree depended on the probe liquid used. Therefore, thus calculated the surface free energies should be considered as apparent ones. Moreover, also the values of the dispersion component y(s)(d) of these layers depend on the probe liquid used, but to a less degree. This must be due to the strength of the force field originating from the probe liquid and the spacing between the interacting molecules. The relationships between y(s)(tot) and y(s)(d) are discussed on the basis of the equations derived. It may be postulated that applying proposed model of the contact angle hysteresis and calculating the apparent total surface free energies and the dispersion contributions better insight into wetting properties of the silyled silicon surface can be achieved. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:121 / 131
页数:11
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