Improvement of photoresist removal efficiency in ozonated water cleaning system

Ozonated water cleaning systems are used to remove photoresist and organic contaminants on silicon wafers and natural organic matter and bacteria in drinking water. In this paper, the effects of O-3 concentration, the system of ozonated water vapor, and substrate temperature on the removal efficiency of photoresist were investigated. A 11.59 kcal/mol of activation energy was obtained for the reaction between aqueous O-3 and I-line photoresist. Increasing the process temperature increases the reaction rate of aqueous O-3 and photoresist, but reduces the solubility Of O-3 in water for O-3-injected system. Therefore, it is important to deliver aqueous O-3 to the wafer surface effectively. The removal rate of photoresist has been accelerated by controlling formation of a boundary layer as well as the temperature of the ozonated water and O-3 solubility. When water vapor was generated with O-3 and sprayed through a nozzle, the highest removal rate of photoresist, 221 nm/min, was obtained. From the results observed in this study, it is concluded that it is important to have a fast uniform boundary layer formation, a thin boundary layer, and production of high concentrations Of O-3 in the chamber in order to improve the removal efficiency of photoresist in the ozonated water system. (c) 2007 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.