Deposition and dielectric properties of (Al2O3)x(TiO2)1-x thin films

被引：14

作者：

Vitanov, P ^{[1
]}

Harizanova, A ^{[1
]}

Ivanova, T ^{[1
]}

Ivanova, K ^{[1
]}

机构：

[1] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BU-1784 Sofia, Bulgaria

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2003年 / 14卷 / 10-12期

关键词：

TiO2; Thin Film; Al2O3; Dielectric Constant; Electronic Material;

D O I：

10.1023/A:1026124414333

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The motivation for this study was to obtain an alloy system (Al2O3)(x)(TiO2)(1-x), that is thermodynamically stable, in direct contact with Si and possessing a high dielectric constant. In the present study, (Al2O3)(x)(TiO)(1-x) films were investigated. They were prepared by spin coating from a sol solution, with additional thermal annealing. The chemical composition and stoichiometry of the films was studied by X-ray photoelectron spectroscopy. For the electrical characteristics, MIS capacitors were fabricated. The determined relative dielectric constants were larger than the reported values for pure Al2O3, due to the presence of TiO2. (C) 2003 Kluwer Academic Publishers.

引用

页码：757 / 758

页数：2

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