Semiconductors under uniaxial strain

被引：24

作者：

Cardona, M

机构：

[1] Max-Planck-Inst. Festkorperforschung, D-70569 Stuttgart

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1996年 / 198卷 / 01期

关键词：

D O I：

10.1002/pssb.2221980103

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Uniaxial strain, having a larger number of irreducible components, yields in principle more information than its hydrostatic counterpart. If has, however, the drawback that its magnitude is limited by sample fracture. We discuss the methods of application of uniaxial stress to solid samples for the purpose of performing spectroscopic measurements. We then present some of the highlights of such measurements, concerning phonons and electronic states in semiconductors.

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页码：5 / 21

页数：17

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