Growth of NiO films on various GaAs faces via electron bombardment evaporation

被引：10

作者：

Nishita, K

Koma, A

Saiki, K

机构：

[1] Univ Tokyo, Sch Sci, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan

[2] Univ Tokyo, Grad Sch Frontier Sci, Dept Complex Sci & Engn, Bunkyo Ku, Tokyo 1130033, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2001年 / 19卷 / 05期

关键词：

D O I：

10.1116/1.1382878

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Growth of NiO films was examined on various crystal faces of GaAs by using a single electron bombardment source. Use of alkali halide buffer layers achieved good quality of epitaxial. growth on GaAs (001). Electron spectroscopies (Auger electron spectroscopy, ultraviolet photoelectron spectroscopy, electron energy loss spectroscopy) revealed that the grown NiO film has almost the same electronic structure as bulk NiO. This method helps integration of 3d transition-metal oxides on technologically important materials such as GaAs or Si. (C) 2001 American Vacuum Society.

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页码：2282 / 2286

页数：5

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