Growth and characterization of 10-nm-thick c-axis oriented epitaxial PbZr0.25Ti0.75O3 thin films on (100)Si substrate

被引:58
作者
Maruyama, T
Saitoh, M
Sakai, I
Hidaka, T
Yano, Y
Noguchi, T
机构
[1] Hewlett Packard Labs, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan
[2] TDK Corp, R&D Ctr, Ichikawa 2720026, Japan
关键词
D O I
10.1063/1.122824
中图分类号
O59 [应用物理学];
学科分类号
摘要
A 10-nm-thick PbZr0.25Ti0.75O3 thin film is epitaxially grown on a SrRuO3/BaTiO3/ZrO2/Si heterostructure substrate by reactive evaporation. Structural and electrical properties of the film are investigated. It is concluded that the film is ferroelectric and retains a native uniform upward polarization. Artificial downward polarization domains, whose average diameter is 24 nm, can be formed in the film. (C) 1998 American Institute of Physics. [S0003-6951(98)04350-2].
引用
收藏
页码:3524 / 3526
页数:3
相关论文
共 10 条
  • [1] Nanoscale imaging of domain dynamics and retention in ferroelectric thin films
    Gruverman, A
    Tokumoto, H
    Prakash, AS
    Aggarwal, S
    Yang, B
    Wuttig, M
    Ramesh, R
    Auciello, O
    Venkatesan, T
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (24) : 3492 - 3494
  • [2] LOCAL POLING OF FERROELECTRIC POLYMERS BY SCANNING FORCE MICROSCOPY
    GUTHNER, P
    DRANSFELD, K
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (09) : 1137 - 1139
  • [3] Characteristics of PZT thin films as ultra-high density recording media
    Hidaka, T
    Maruyama, T
    Sakai, I
    Saitoh, M
    Wills, LA
    Hiskes, R
    Dicarolis, SA
    Amano, J
    Foster, CM
    [J]. INTEGRATED FERROELECTRICS, 1997, 17 (1-4) : 319 - 327
  • [4] Hidaka T, 1996, APPL PHYS LETT, V68, P2358, DOI 10.1063/1.115857
  • [5] Size effect on the phase transition in PbTiO3 fine particles
    Ishikawa, K
    Nomura, T
    Okada, N
    Takada, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (9B): : 5196 - 5198
  • [6] ANOMALOUS MISFIT STRAIN RELAXATION IN ULTRATHIN YBA2CU3O7-DELTA EPITAXIAL-FILMS
    KAMIGAKI, K
    TERAUCHI, H
    TERASHIMA, T
    BANDO, Y
    IIJIMA, K
    YAMAMOTO, K
    HIRATA, K
    HAYASHI, K
    NAKAGAWA, I
    TOMII, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (06) : 3653 - 3662
  • [7] Novel ferroelectric epitaxial (Ba,Sr)TiO3 capacitor for deep sub-micron memory applications
    Kawakubo, T
    Abe, K
    Komatsu, S
    Sano, K
    Yanase, N
    Mochizuki, H
    [J]. IEEE ELECTRON DEVICE LETTERS, 1997, 18 (11) : 529 - 531
  • [8] FERROELECTRIC MEMORIES
    SCOTT, JF
    DEARAUJO, CAP
    [J]. SCIENCE, 1989, 246 (4936) : 1400 - 1405
  • [9] DOMAIN CONFIGURATIONS DUE TO MULTIPLE MISFIT RELAXATION MECHANISMS IN EPITAXIAL FERROELECTRIC THIN-FILMS .1. THEORY
    SPECK, JS
    POMPE, W
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (01) : 466 - 476
  • [10] EPITAXIAL-GROWTH AND DIELECTRIC-PROPERTIES OF BATIO3 FILMS ON PT ELECTRODES BY REACTIVE EVAPORATION
    YANO, Y
    IIJIMA, K
    DAITOH, Y
    TERASHIMA, T
    BANDO, Y
    WATANABE, Y
    KASATANI, H
    TERAUCHI, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) : 7833 - 7838