Field emission from ZrC films on Si and Mo single emitters and emitter arrays

被引：41

作者：

Xie, TB

Mackie, WA

Davis, PR

机构：

[1] Linfield Research Institute, McMinnville

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 03期

关键词：

D O I：

10.1116/1.588876

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

Field emission from ZrC films deposited on Si and Mo single emitters and field emitter arrays (FEAs) has been studied. For single emitters, the results show dramatic improvements in emitter performance by reducing work functions-on the order of 1 eV-and increasing stability. For FEAs, deposition of a ZrC film reduced the operating voltage 30%-50% at an emission current of 1.0 mu A/tip and increased the emission stability. (C) 1996 American Vacuum Society.

引用

页码：2090 / 2092

页数：3

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