Disorder effects in diluted ferromagnetic semiconductors

Carrier induced ferromagnetism in diluted III-V semiconductor (DMS) is analyzed within a two-step approach. First, within a single site coherent-potential approximation formalism, we calculate the element resolved averaged Green's function of the itinerant carrier. Then using a generalized RKKY formula we evaluate the Mn-Mn long-range exchange integrals and the Curie temperature as a function of the exchange parameter, magnetic impurity concentration, and carrier density. The effect of a proper treatment of the disorder which includes all single-site multiple scattering appears to play a crucial role. The standard RKKY calculation which neglects disorder, strongly underestimates the Curie temperature and is inappropriate to describe magnetism in DMS. It is also shown that an antiferromagnetic exchange favors higher Curie temperature.