Temperature dependence of the conductance in diluted magnetic semiconductors

被引:3
作者
Lopez-Sancho, M. P. [1 ]
Brey, L. [1 ]
机构
[1] CSIC, Inst Ciencia Mat Madrid, Madrid 28049, Spain
关键词
magnetic semiconductor;
D O I
10.1016/j.jmmm.2003.12.816
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect that the ferromagnetic order has on the electrical properties of the diluted magnetic semiconductors is investigated by analyzing the temperature dependence of the dielectric constant and the resistivity. We use a six band Kohn - Luttinger Hamiltonian, thermal. uctuations are treated in the mean-field approximation, carrier - carrier interaction in the random phase approximation, and transport properties using the relaxation time approximation. Resistivity changes near 20% when going from zero to Curie temperature are obtained in good agreement with experiment. We explain this change in the resistivity in terms of the variation of the Fermi surface and the transport scattering time when going from the ferromagnetic phase to the paramagnetic phase. (C) 2003 Elsevier B. V. All rights reserved.
引用
收藏
页码:E1585 / E1586
页数:2
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