Giant magnetoresistance near the magnetostructural transition in Gd5(Si1.8Ge2.2)

被引：178

作者：

Morellon, L ^{[1
]}

Stankiewicz, J

García-Landa, B

Algarabel, PA

Ibarra, MR

机构：

[1] Univ Zaragoza, Dept Fis Mat Condensada, E-50009 Zaragoza, Spain

[2] Univ Zaragoza, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain

[3] CSIC, E-50009 Zaragoza, Spain

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 23期

关键词：

D O I：

10.1063/1.122797

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zero-field electrical resistivity over the temperature range of 4-300 K and magnetoresistance in magnetic fields of up to 12 T have been measured in Gd-5(Si1.8Ge2.2). This system undergoes a first-order magnetostructural transition at T-C congruent to 240 K, from a high-temperature paramagnetic to a low-temperature ferromagnetic phase, accompanied by a large drop in the resistivity. The application of an external magnetic field above T-C can induce this transition, and a giant negative magnetoresistance effect (Delta rho/rho congruent to -20%) is observed associated with this first-order field-induced transition. (C) 1998 American Institute of Physics. [S0003-6951(98)00449-5].

引用

页码：3462 / 3464

页数：3

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