Doping of Organic Semiconductors Using Molybdenum Trioxide: a Quantitative Time-Dependent Electrical and Spectroscopic Study

被引:118
作者
Gwinner, Michael C. [1 ]
Di Pietro, Riccardo [1 ]
Vaynzof, Yana [1 ]
Greenberg, Kathryn J. [1 ]
Ho, Peter K. H. [2 ]
Friend, Richard H. [1 ]
Sirringhaus, Henning [1 ]
机构
[1] Univ Cambridge, Cavendish Lab, Dept Phys, Cambridge CB3 0HE, England
[2] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
基金
英国工程与自然科学研究理事会;
关键词
CHARGE-TRANSPORT PROPERTIES; METAL-OXIDE; HOLE-INJECTION; EFFICIENCY; MOO3; XPS; TRANSISTORS; INTERFACES; AMBIPOLAR; CLUSTERS;
D O I
10.1002/adfm.201002696
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Doping of organic semiconductors (OSCs) with transition metal oxides such as molybdenum trioxide (MoO3) has been used as a powerful method to overcome common issues such as contact resistance and low conductivity, which are limiting factors in organic optoelectronic devices. In this study, the mechanism and efficiency of MoO3-induced p-type doping in OSCs are investigated by means of simultaneous electrical and spectroscopic measurements on lateral diodes. It is demonstrated that energetic changes in the MoO3 energy levels outside vacuum can limit charge-transfer doping and device performance. It is shown and investigated that these changes crucially depend on the OSC. The time evolution of important OSC parameters such as induced charge density, doping concentration and efficiency, conductivity and mobility, is deduced. Moreover, the energetic and chemical changes in MoO3 are investigated via ultraviolet and x-ray photoemission spectroscopy. Combining these experiments, important conclusions are drawn on the time-dependence and stability of MoO3-doping of OSCs, as well as on the processing conditions and device architectures suitable for high-performance devices.
引用
收藏
页码:1432 / 1441
页数:10
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