High output nanogenerator based on assembly of GaN nanowires

被引：72

作者：

Lin, Long ^{[1
]}

Lai, Chen-Ho ^{[1
,2
]}

Hu, Youfan ^{[1
]}

Zhang, Yan ^{[1
]}

Wang, Xue ^{[1
]}

Xu, Chen ^{[1
]}

Snyder, Robert L. ^{[1
]}

Chen, Lih-J ^{[2
]}

Wang, Zhong Lin ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

来源：

NANOTECHNOLOGY | 2011年 / 22卷 / 47期

关键词：

SOLAR-CELLS; SILICON NANOWIRES; NANOPIEZOTRONICS; TECHNOLOGIES; NANODEVICES; WURTZITE; ARRAYS; LASERS;

D O I：

10.1088/0957-4484/22/47/475401

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

GaN nanowires (NWs) were synthesized through a vapor-liquid-solid (VLS) process. Based on structural analysis, the c-axis of the NW was confirmed to be perpendicular to the growth direction. Nanogenerators (NGs) fabricated by rational assembly of the GaN NWs produced an output voltage up to 1.2 V and output current density of 0.16 mu A cm(-2). The measured performance of the GaN NGs was consistent with the calculations using finite element analysis (FEA).

引用

页数：5

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