Structural origin of gap states in semicrystalline polymers and the implications for charge transport

被引:180
作者
Rivnay, Jonathan [1 ]
Noriega, Rodrigo [1 ]
Northrup, John E. [2 ]
Kline, R. Joseph [3 ]
Toney, Michael F. [4 ]
Salleo, Alberto [1 ]
机构
[1] Stanford Univ, Stanford, CA 94305 USA
[2] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA
[3] NIST, Gaithersburg, MD 20899 USA
[4] Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA
来源
PHYSICAL REVIEW B | 2011年 / 83卷 / 12期
基金
美国国家科学基金会;
关键词
RAY-DIFFRACTION PATTERNS; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; HIGH-MOBILITY; ORGANIC SEMICONDUCTORS; CONJUGATED POLYMERS; CARRIER MOBILITY; CRYSTALLINE; DISORDER; TEXTURE;
D O I
10.1103/PhysRevB.83.121306
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We quantify the degree of paracrystalline disorder in the pi-pi stacking direction of crystallites of a high performing semicrystalline semiconducting polymer with advanced x-ray line-shape analysis. Using density functional theory calculations to provide input to a simple tight-binding model, we obtain the density of states of a system of pi-pi stacked polymer chains with increasing amounts of paracrystalline disorder. We find that, for an aligned film of PBTTT, the paracrystalline disorder is 7.3%. This type of disorder induces a tail of trap states with a breadth of similar to 100 meV as determined through calculation. This finding agrees with previous device modeling and provides physical justification for the mobility edge model.
引用
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页数:4
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