Coherent plasmons in n-doped GaAs

被引：97

作者：

Kersting, R

Heyman, JN

Strasser, G

Unterrainer, K

机构：

[1] Vienna Univ Technol, Inst Festkorperelektr & Mikrostrukturzentrum, A-1040 Vienna, Austria

[2] Macalester Coll, Dept Phys & Astron, St Paul, MN 55105 USA

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.58.4553

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Femtosecond laser excitation of bulk n-doped GaAs leads to coherent plasmon excitations that emit intense submillimeter wave radiation. We investigated the underlying plasmon dynamics in time-resolved experiments on the emitted THz radiation. The results show that THz pulses are emitted due to the coherent oscillation of the extrinsic electron plasma in the hulk. The plasmon excitations are started by single-sided screening of the surface depletion field after photoexcitation. Temperature-dependent measurements indicate that the plasmon damping is due to phonon scattering.

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页码：4553 / 4559

页数：7

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