Low dielectric constant materials

被引:60
作者
Treichel, H [1 ]
机构
[1] Gason Int, San Jose, CA 95134 USA
关键词
polymers; CVD; spin-on materials; low dielectric constant; intermetal dielectric; RC delay; CMP; clean;
D O I
10.1007/s11664-001-0033-z
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The more advanced an integrated circuit becomes, the more stringent are the demands for certain properties of a dielectric or insulating material. In addition, it is essential that the layer maintain its specific electrical, physical, and chemical properties after incorporation in the device structure and during subsequent processing. Due to temperature budget constraints and the accelerated decrease of feature sizes below 0.25 mum, one can no longer rely on traditional choices but has to search for alternatives, both for low and high permittivity replacements, In this article we survey currently used low dielectric constant materials and future trends for microelectronic applications.
引用
收藏
页码:290 / 298
页数:9
相关论文
共 29 条
[1]  
Ahlburn B. T., 1995, P 1 DIEL ULSI VLSI M, P36
[2]  
BOTHRA S, 1997, P 14 INT VLSI MULT I, P134
[3]  
BRINKER CF, 2000, 11 DIEL CVD MET S SA
[4]  
FLEMING JG, 1997, DIELECTRICS ULSI MUL, P139
[5]   OLIGOMERIC SILSEQUIOXANES, (HSIO3/2)N [J].
FRYE, CL ;
COLLINS, WT .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1970, 92 (19) :5586-&
[6]   HIGH-TEMPERATURE POLYMER FOAMS [J].
HEDRICK, J ;
LABADIE, J ;
RUSSELL, T ;
HOFER, D ;
WAKHARKER, V .
POLYMER, 1993, 34 (22) :4717-4726
[7]  
HENDRICKS NH, 1995, MATER RES SOC SYMP P, V381, P59, DOI 10.1557/PROC-381-59
[8]  
Homma Y., 1995, P 12 INT VLSI MULT I, P457
[9]  
JIN C, 1997, MRS BULL, P39
[10]  
JIN C, 1996, ABSTR ADV MET INTERC