Increased short circuit current in organic photovoltaic using high-surface area electrode based on ZnO nanowires decorated with CdTe quantum dots

被引：15

作者：

Aga, R. S., Jr. ^{[1
]}

Gunther, D. ^{[1
]}

Ueda, A. ^{[1
]}

Pan, Z. ^{[1
]}

Collins, W. E. ^{[1
]}

Mu, R. ^{[1
]}

Singer, K. D. ^{[2
]}

机构：

[1] Fisk Univ, Ctr Phys & Chem Mat, Nashville, TN 37208 USA

[2] Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 46期

关键词：

SOLAR-CELLS;

D O I：

10.1088/0957-4484/20/46/465204

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A photosensitized high-surface area transparent electrode has been employed to increase the short circuit current of a photovoltaic device with a blend of poly(3-hexylthiophene) (P3HT) and (6,6)-phenyl C61 butyric acid methyl ester (PCBM) as the active layer. This is achieved by directly growing ZnO nanowires on indium tin oxide (ITO) film via a physical vapor method. The nanowire surface is then decorated with CdTe quantum dots by pulsed electron-beam deposition (PED). The nanowires alone provided a 20-fold increase in the short circuit current under visible light illumination. This was further increased by a factor of similar to 1.5 by the photosensitization effect of CdTe, which has an optical absorption of up to 820 nm.

引用

页数：8

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