Surface conductivity of hydrogenated diamond films

被引:22
作者
Andriotis, Antonis N.
Mpourmpakis, Giannis
Richter, Ernst
Menon, Madhu
机构
[1] FORTH, Inst Elect Struct & Laser, GR-71110 Iraklion, Greece
[2] Univ Delaware, Dept Chem Engn, Ctr Catalytic Sci & Technol, Newark, DE 19716 USA
[3] Daimler AG FT 3 SA, Ulm, Germany
[4] Univ Kentucky, Dept Phys & Astron, Lexington, KY 40506 USA
[5] Univ Kentucky, Ctr Comput Sci, Lexington, KY 40506 USA
关键词
D O I
10.1103/PhysRevLett.100.106801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The experimentally observed high surface conductivity of hydrogenated diamond films is explained through ab initio results as well as model calculations based on the tight-binding molecular dynamics method. Our results support the previously reported experimental results indicating that the surface conductivity of the hydrogenated diamond surfaces is due to the surface adsorption of a H3O+ monolayer. Specifically, it is shown that the presence of the H3O+ adlayer results in the formation of an electrostatic surface dipole moment which makes the potential of the surface H layer effectively more attractive. This, in turn, ignites charge transfer from the diamond lattice to the surface layer creating, thus, the necessary charge carriers (holes) for the observed high conductivity.
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页数:4
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