Migration of corundum crystal basal surfaces in a matrix of fine alumina grains and anorthite liquid

被引:12
作者
Back, JH
Kim, MJ
Yoon, DY [1 ]
机构
[1] Korea Res Inst Stand & Sci, Taejon, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
关键词
D O I
10.1111/j.1551-2916.2005.00577.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Corundum crystals with basal surfaces have been embedded in a matrix of fine alumina grains and 15 wt% anorthite and heat treated at 1620 degrees C. During the heat treatment, the fine alumina grains and the corundum crystals grow. The corundum basal surfaces that have been scratched grow most rapidly and those with a low dislocation etch pit density grow most slowly. The corundum basal surfaces with a high dislocation etch pit density grow at an intermediate rate. When the matrix alumina grains are very fine in the initial heat-treatment stage, all three corundum basal planes grow at approximately the same rate, and, as the matrix grains coarsen, the growth rates of the basal surfaces diverge. The plots of the migration rates of the basal surfaces and the inverse average size of the matrix grains are non-linear and depend on the estimated dislocation content at the basal surfaces. Such a growth behavior of the basal surfaces resembles those of the singular surfaces of a single crystal growing in a fluid. The results show that dislocations in the grains are important in abnormal growth of grains in liquid matrix.
引用
收藏
页码:3177 / 3183
页数:7
相关论文
共 49 条
[1]   HELIUM: SOLID-LIQUID INTERFACES [J].
Balibar, S. ;
Castaing, B. .
SURFACE SCIENCE REPORTS, 1985, 5 (03) :87-143
[2]   MECHANISM FOR THE ROLE OF MAGNESIA IN THE SINTERING OF ALUMINA CONTAINING SMALL AMOUNTS OF A LIQUID-PHASE [J].
BATEMAN, CA ;
BENNISON, SJ ;
HARMER, MP .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1989, 72 (07) :1241-1244
[3]   ANALYSIS OF DISLOCATIONS CREATING MONO-MOLECULAR GROWTH STEPS [J].
BAUSER, E ;
STRUNK, H .
JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) :362-366
[4]   DISLOCATIONS AS GROWTH STEP SOURCES IN SOLUTION GROWTH AND THEIR INFLUENCE ON INTERFACE STRUCTURES [J].
BAUSER, E ;
STRUNK, H .
THIN SOLID FILMS, 1982, 93 (1-2) :185-194
[5]  
BENNEMA P, 1987, MORPHOLOGY CRYSTALS, P1
[6]   THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].
BURTON, WK ;
CABRERA, N ;
FRANK, FC .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358
[7]   PHASE-TRANSITION IN 2-DIMENSIONAL COULOMB GAS, AND INTERFACIAL ROUGHENING TRANSITION [J].
CHUI, ST ;
WEEKS, JD .
PHYSICAL REVIEW B, 1976, 14 (11) :4978-4982
[8]   DYNAMICS OF ROUGHENING TRANSITION [J].
CHUI, ST ;
WEEKS, JD .
PHYSICAL REVIEW LETTERS, 1978, 40 (12) :733-736
[9]   Effect of dislocations on grain growth in strontium titanate [J].
Chung, Sung-Yoon ;
Kang, Suk-Joong L. .
2000, American Ceramic Soc, Westerville (83)
[10]   Intergranular amorphous films and dislocations-promoted grain growth in SrTiO3 [J].
Chung, SY ;
Kang, SJL .
ACTA MATERIALIA, 2003, 51 (08) :2345-2354