A high resolution, stictionless, CMOS compatible SOI accelerometer with a low noise, low power, 0.25μm CMOS interface

被引：22

作者：

Amini, BV ^{[1
]}

Pourkamah, S ^{[1
]}

Ayazi, F ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

MEMS 2004: 17TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/MEMS.2004.1290649

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The implementation and characterization of a high sensitivity silicon-on-insulator (SOI) capacitive microaccelerometer with sub-25mug resolution is presented. The in-plane accelerometers were fabricated on 40mum thick SOI substrates using a two-mask, dry-release low temperature process comprising of three plasma etching steps. The fabricated devices were interfaced with a high resolution, low noise and low power switched-capacitor integrated circuit (IC) fabricated in a 2.5V 0.25mum N-well CMOS process. The measured sensitivity is 0.2pF/g and the output noise floor is 20 mugrootHz. The total power consumption is 3mW.

引用

页码：572 / 575

页数：4