Experimental study of LEC GaAs detectors for X-ray digital radiography

被引：14

作者：

Amendolia, SR

Bisogni, MG

Campbell, M

Cola, A

DAuria, S

DaVia, C

Heijne, EHM

Fantacci, ME

OShea, V

Rosso, V

Smith, K

Vasanelli, L

机构：

[1] UNIV PISA,DIPARTIMENTO FIS,PISA,ITALY

[2] IST NAZL FIS NUCL,PISA,ITALY

[3] UNIV SASSARI,IST FIS,I-07100 SASSARI,ITALY

[4] CERN,EUROPEAN LAB PARTICLE PHYS,CH-1211 GENEVA,SWITZERLAND

[5] CNR,IST MAT ELETTRON,LECCE,ITALY

[6] UNIV GLASGOW,DEPT PHYS & ASTRON,GLASGOW,LANARK,SCOTLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 380卷 / 1-2期

关键词：

D O I：

10.1016/S0168-9002(96)00477-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In previous studies, various semi-insulating LEC GaAs crystals were irradiated with photons in the diagnostic energy range (20-100 keV), in view of a possible application in digital radiography. Solid-state and irradiation measurements, together with Monte Carlo simulations, have indicated good candidates for this application among the crystals we have investigated. In this paper we present results concerning the detection characteristics (detection efficiency, charge-collection efficiency and energy resolution as functions of the bias voltage) of one of these materials and the images obtained by a pixel detector made on the same material and a bump-bonded electronic system.

引用

页码：410 / 413

页数：4

共 4 条

[1] EVALUATION OF ELEMENTAL AND COMPOUND SEMICONDUCTORS FOR X-RAY DIGITAL RADIOGRAPHY [J].