Raman scattering under pressure in ZnGa2Se4

被引:27
作者
Allakhverdiev, K
Gashimzade, F
Kerimova, T
Mitani, T
Naitou, T
Matsuishi, K
Onari, S [1 ]
机构
[1] Univ Tsukuba, Inst Mat Sci, Tsukuba, Ibaraki 305, Japan
[2] Mat & Chem Technol Res Inst, Gebze, Turkey
[3] Azerbaijan Natl Acad Sci, Inst Phys, Baku, Azerbaijan
关键词
semiconductors;
D O I
10.1016/S0022-3697(03)00077-5
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The Raman scattering spectra of ZnGa2Se4 under pressure were investigated at 300 K up to 18.9 GPa. Two stages were observed in the pressure dependences of Raman bands. Such behavior in accordance with the experimental findings existing in literature and was attributed as arising due to the order-disorder phase transition in the cation sublattice. Using the Harrison-Keating's model of the lattice dynamics modified for the crystals with the tetragonal structure, the bulk modulus B and the mode-Gruneisen parameters Gamma(i) were determined for the first time. It is shown that a better agreement between the experimental and calculated values of Gamma(i) is observed, if one takes into consideration different frequency-pressure behavior for the bond-bending and the bond-stretching parameters, which determine the low- (lower than 140 cm(-1)) and high(higher than 140 cm(-1)) frequency phonons, respectively. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1597 / 1601
页数:5
相关论文
共 19 条
[1]  
BARANOVSKI JM, 1984, J PHYS C SOLID STATE, V17, P6387
[2]   ORDERED-VACANCY-COMPOUND SEMICONDUCTORS - PSEUDOCUBIC CDIN2SE4 [J].
BERNARD, JE ;
ZUNGER, A .
PHYSICAL REVIEW B, 1988, 37 (12) :6835-6856
[3]  
DAVYDOV SY, 1996, FIZ TEKH POLUPROV, V7, P1300
[4]   Theoretical study of the ordered-vacancy semiconducting compound CdAl2Se4 [J].
Fuentes-Cabrera, M ;
Sankey, OF .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (08) :1669-1684
[5]   Ab initio study of the vibrational and electronic properties of CdGa2S4 and CdGa2Se4 under pressure [J].
Fuentes-Cabrera, M .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (45) :10117-10124
[6]  
HAHN H, 1955, Z ANORG ALLG CHEM, V279, P211
[7]  
HARISSON W, 1983, MOSKVA, V1, P381
[9]   EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J].
KEATING, PN .
PHYSICAL REVIEW, 1966, 145 (02) :637-&
[10]  
Kerimova T. G., 1985, SOV PHYS-SOLID STATE, V27, P949