Bulk quantum Hall effect in η-Mo4O11

被引：67

作者：

Hill, S ^{[1
]}

Uji, S

Takashita, M

Terakura, C

Terashima, T

Aoki, H

Brooks, JS

机构：

[1] Montana State Univ, Dept Phys, Bozeman, MT 59717 USA

[2] Natl Res Inst Met, Tsukuba, Ibaraki 305, Japan

[3] Florida State Univ, Dept Phys, Tallahassee, FL 32310 USA

[4] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

[5] Univ Calif Los Alamos Natl Lab, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 16期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevB.58.10778

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the observation of a bulk quantum Hall effect in the quasi-two-dimensional conductor eta-Mo4O11. The Hall resistance exhibits well-defined quantized plateaus, coincident with pronounced minima in the diagonal resistance. We propose a model involving (i) tiny quasi-two-dimensional electron and hole pockets, left over from an imperfectly nested charge-density wave, and (ii) the exchange of carriers between these mobile states and the localized charge-density-wave condensate. Together with a magnetic field, these factors result in well-separated bands of mobile states superimposed on a background continuum of localized states-the key ingredients for a quantum Hall effect. We also discuss the implications of these findings in the light of recent predictions concerning chiral metallic surface states in bulk quantum Hall systems. [S0163-1829(98)06140-2].

引用

页码：10778 / 10783

页数：6

共 22 条

[1] CONCEPTUAL ASPECTS OF STRUCTURE PROPERTY CORRELATIONS AND ELECTRONIC INSTABILITIES, WITH APPLICATIONS TO LOW-DIMENSIONAL TRANSITION-METAL OXIDES [J].