Optoelectronic properties of InAs1-xPx semiconducting alloys

被引：61

作者：

Bouarissa, N ^{[1
]}

机构：

[1] Int Ctr Theoret Phys, I-34100 Trieste, Italy

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 86卷 / 01期

关键词：

zincblende; optoelectronic properties; semiconductors;

D O I：

10.1016/S0921-5107(01)00658-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The investigation of optoelectronic properties of zineblende, InAs1-xPx, semiconducting alloys by pseudopotential calculations is reported in this paper. Our scheme employs the local empirical pseudopotential method, and includes the disorder effect into the virtual crystal approximation by introducing an effective disorder potential. Various quantities such as band lineup, band-gap energies, valence bandwidth, refractive index and optical dielectric constant for the alloy of interest are calculated. Our results show a reasonable agreement with the available experimental data. Attention has also been paid to the compositional dependence of these quantities studied. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：53 / 59

页数：7

共 21 条

[1] BAND-GAPS AND REFRACTIVE-INDEXES OF ALGAASSB, GAINASSB, AND INPASSB - KEY PROPERTIES FOR A VARIETY OF THE 2-4-MU-M OPTOELECTRONIC DEVICE APPLICATIONS [J].