Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition

被引：3477

作者：

Lee, Yi-Hsien ^{[1
]}

Zhang, Xin-Quan ^{[3
]}

Zhang, Wenjing ^{[1
]}

Chang, Mu-Tung ^{[2
]}

Lin, Cheng-Te ^{[1
]}

Chang, Kai-Di ^{[3
]}

Yu, Ya-Chu ^{[3
]}

Wang, Jacob Tse-Wei ^{[1
]}

Chang, Chia-Seng ^{[2
]}

Li, Lain-Jong ^{[1
]}

Lin, Tsung-Wu ^{[3
]}

机构：

[1] Acad Sinica, Inst Atom & Mol Sci, Taipei 10617, Taiwan

[2] Acad Sinica, Inst Phys, Taipei 11529, Taiwan

[3] Tunghai Univ, Dept Chem, Taichung 40704, Taiwan

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 17期

关键词：

molybdenum disulfide; layered materials; field-effect transistors; chemical vapor deposition; THIN-FILMS; INORGANIC FULLERENES; BORON-NITRIDE; GRAPHENE; HYDROGEN; LITHIUM; PHOTOLUMINESCENCE; NANOPARTICLES; EXFOLIATION; NANOSHEETS;

D O I：

10.1002/adma.201104798

中图分类号：

O6 [化学];

学科分类号：

070301 [无机化学];

摘要：

Large-area MoS 2 atomic layers are synthesized on SiO 2 substrates by chemical vapor deposition using MoO 3 and S powders as the reactants. Optical, microscopic and electrical measurements suggest that the synthetic process leads to the growth of MoS 2 monolayer. The TEM images verify that the synthesized MoS 2 sheets are highly crystalline. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2320 / 2325

页数：6

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