Electronic structure of the alkaline-earth silicon nitrides M2Si5N8 (M = Ca and Sr) obtained from first-principles calculations and optical reflectance spectra

被引:39
作者
Fang, CM
Hintzen, HT
de With, G
de Groot, RA
机构
[1] Eindhoven Univ Technol, Lab Solid State Mat Chem, NL-5600 MB Eindhoven, Netherlands
[2] Catholic Univ Nijmegen, Mat Res Inst, NL-6525 ED Nijmegen, Netherlands
关键词
D O I
10.1088/0953-8984/13/1/307
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Results of first-principles band-structure calculations for the ternary alkaline-earth silicon nitrides M2Si5N8 (M = Ca and Sr) are presented. In the structures of M2Si5N8 (M = Ca, Sr and Ba), the N atoms show connections to two (N-[2]) and three (N-[3]) neighbouring silicon tetrahedral centres. Calculations show that the local electronic structure is strongly dependent on the local chemical bonding. The valence band is dominated by N 2p hybridized with the s, p states of the alkaline-earth-metal and silicon atoms. The upper part of the valence band is dominated by the 2p states of N-[2] atoms, while the N-[3] 2p states lie about 2 eV below the Fermi level. The bottom of the conduction band consists of the N 3s characters hybridized with s orbitals of the alkaline-earth metals, while the s character of Si atoms is higher in energy. Sr2Si5N8 is a semiconductor with a direct energy gap at Gamma, while Ca2Si5N8 is an indirect semiconductor. Optical diffuse reflectance spectra show an energy gap of 4.9 eV for Ca2Si5N8, 4.5 eV for Sr2Si5N8, as well as 4.1 eV for Ba2Si5N8, in fair agreement with the calculated values.
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页码:67 / 76
页数:10
相关论文
共 32 条
  • [1] AKASAKI I, 1997, NITR SEM MAT RES SOC, V482, P3
  • [2] LINEAR METHODS IN BAND THEORY
    ANDERSEN, OK
    [J]. PHYSICAL REVIEW B, 1975, 12 (08): : 3060 - 3083
  • [3] EXPLICIT, 1ST-PRINCIPLES TIGHT-BINDING THEORY
    ANDERSEN, OK
    JEPSEN, O
    [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (27) : 2571 - 2574
  • [4] Solid-state carbon nitrides
    Badding, JV
    [J]. ADVANCED MATERIALS, 1997, 9 (11) : 877 - +
  • [5] Anisotropic thermal expansion of MgSiN2 from 10 to 300 K as measured by neutron diffraction
    Bruls, RJ
    Hintzen, HT
    Metselaar, R
    Loong, CK
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2000, 61 (08) : 1285 - 1293
  • [6] The conduction bands of MgO, MgS and HfO2
    de Boer, PK
    de Groot, RA
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (45) : 10241 - 10248
  • [7] Conduction bands and invariant energy gaps in alkali bromides
    de Boer, PK
    de Groot, RA
    [J]. EUROPEAN PHYSICAL JOURNAL B, 1998, 4 (01) : 25 - 28
  • [8] The origin of the conduction band in table salt
    de Boer, PK
    de Groot, RA
    [J]. AMERICAN JOURNAL OF PHYSICS, 1999, 67 (05) : 443 - 445
  • [9] Ab initio band structure calculations of Mg3N2 and MgSiN2
    Fang, CM
    de Groot, RA
    Bruls, RJ
    Hintzen, HT
    de With, G
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (25) : 4833 - 4842
  • [10] First-principles local-orbital calculation of the structural and electronic properties of ordered and random alloys of GaN and AlN
    Fritsch, J
    Sankey, OF
    Schmidt, KE
    Page, JB
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (11) : 2351 - 2361