Ruggedness and reliability of the 2.5kV-1.8kA Power Pack IGBT with a novel multi-collector structure

被引：7

作者：

Koga, T ^{[1
]}

Yamazaki, K ^{[1
]}

Wakimoto, H ^{[1
]}

Takahashi, Y ^{[1
]}

Kirihata, H ^{[1
]}

Seki, Y ^{[1
]}

机构：

[1] Fuji Elect Corp Res & Dev Ltd, Matsumoto, Nagano 3900821, Japan

来源：

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 1998年

关键词：

D O I：

10.1109/ISPSD.1998.702739

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

A 2.5kV-1.8kA advanced type Power Pack IGBT has been developed by use of our original multi-collector structure. From this multi-collector structure, we can drastically reduce the thermal stress occurring during the power cycling test. In addition to the mechanical ruggedness, the high turn-off capability of Ic=6600A, Vc(peak)=2400V,Tj=125 degrees C and the wide SCSOA of Vcc=1800V, Ic=10000A, Tj=125 degrees C,tw=15 mu s are realized. These high electrical ruggedness come from decreasing the imbalance operation among chips.

引用

页码：437 / 440

页数：4