Intrinsic thermal-resistive process of crystals: Umklapp processes at low and high temperatures

被引:36
作者
Han, YJ
机构
[1] Department of Physics, Soonchunhyang University, Asan
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 13期
关键词
D O I
10.1103/PhysRevB.54.8977
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Three-phonon umklapp processes are considered as the main intrinsic thermal-resistive processes in the crystals. The splitting umklapp processes are considered as the important process in thermal-resistive processes at low and high temperatures. Based upon a two-dimensional model, the simplest possible model is constructed for umklapp process. Real computational expressions are provided using the data of a phonon-dispersion relation of the direction of the principal reciprocal-lattice vectors and the given lattice characteristics. To test the model, the calculations are compared with the existing data of the purest crystals of LiF and NaF.
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页码:8977 / 8980
页数:4
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