First stages of CuInSe2 electrodeposition from Cu(II)-In(III)-Se(IV) acidic solutions on polycrystalline mo films

被引:26
作者
Roussel, O. [1 ]
Ramdani, O. [1 ]
Chassaing, E. [1 ]
Grand, P. -P. [1 ]
Lamirand, M. [1 ]
Etcheberry, A. [2 ]
Kerrec, O. [1 ]
Guillemoles, J. -F. [1 ]
Lincot, D. [1 ]
机构
[1] ENSCP, CNRS, IRDEP UMR EDF 7174, Inst Res & Dev Photovolta Energy, F-78401 Chatou, France
[2] UVSQ, CNRS, UMR 8637, Lavoisier Inst, F-78035 Versailles, France
关键词
D O I
10.1149/1.2815476
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The first stages of the electrochemical deposition of a Cu-In-Se compound on molybdenum-coated glass were investigated. The surface morphology was examined after various deposition times by a field emission gun-scanning electron microscope. The surface composition and chemical environment analysis were characterized by X-ray photoelectron spectroscopy (XPS). Raman spectroscopy, X-ray diffraction, and X-ray fluorescence were also performed. This enabled the growth steps to be evidenced. A quasi-instantaneous three-dimensional nucleation occurs. The first nuclei are made of a copper-rich Cu-Se phase without indium. Codeposition of indium starts when the Se/Cu surface ratio reaches a value close to 1, which confirms that the formation of a Cu-Se phase is a prerequisite for indium incorporation. With increasing the deposition time, the In/Cu surface ratio increases and tends to a constant value close to 0.5, smaller than the bulk value. The Se/Cu ratio increases first rapidly and then more slowly, when coalescence of the nuclei has occurred. XPS analysis shows that this two-step behavior corresponds to an evolution of the chemical environment of the Se species, indicating the presence of several Se compounds in the film. X-ray diffraction and Raman spectroscopy confirm the presence of a Cu-Se phase and elemental Se, in addition to the predominant chalcopyrite phase. (c) 2007 The Electrochemical Society.
引用
收藏
页码:D141 / D147
页数:7
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