InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

被引：59

作者：

Aderhold, J

Davydov, VY

Fedler, F

Klausing, H

Mistele, D

Rotter, T

Semchinova, O

Stemmer, J

Graul, J

机构：

[1] Univ Hannover, LFI, D-30167 Hannover, Germany

[2] PTI AF Ioffe RAN, St Petersburg, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 222卷 / 04期

关键词：

group III-nitrides; InN; thin films; structural and electrical properties; growth condition;

D O I：

10.1016/S0022-0248(00)00986-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this priority communication it will be shown that InN thin films can be successfully grown using the metalorganic molecular beam epitaxy (MOMBE) method. For the first time the proper choice of growth conditions allows to obtain good quality InN thin films with a charge carrier concentration as low as 8.8 x 10(18)cm(-3). (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：701 / 705

页数：5

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