Effect of ZnO processing on the photovoltage of ZnO/poly(3-hexylthiophene) solar cells

被引：106

作者：

Olson, Dana C. ^{[1
]}

Lee, Yun-Ju ^{[2
]}

White, Matthew S. ^{[1
]}

Kopidakis, Nikos ^{[1
]}

Shaheen, Sean E. ^{[3
]}

Ginley, David S. ^{[1
]}

Voigt, James A. ^{[2
]}

Hsu, Julia W. P. ^{[2
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] Univ Denver, Dept Phys & Astron, Denver, CO 80208 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2008年 / 112卷 / 26期

关键词：

D O I：

10.1021/jp802626u

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Proper contact and band alignment across the heterojunction interface is critical to the performance of hybrid pi-conjugated polymer-nanostructured metal oxide photovoltaic devices. We investigated the effect of ZnO surface processing on ZnO/poly(3-hexylthiolphene) device performance. Devices in which the ZnCl films/nanorods were heated at 150 degrees C in air exhibited an open circuit voltage similar to 200 mV higher than devices with ZnO treated by UV/ozone. We conclude that the differences observed in the two types of devices predominantly arise from changes in interfacial dipoles, and intermediate materials processing can be critical to solar cell performance.

引用

页码：9544 / 9547

页数：4

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