Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction

被引：23

作者：

Martini, S

Quivy, AA

da Silva, MJ

Lamas, TE

da Silva, ECF

Leite, JR

Abramof, E

机构：

[1] Univ Sao Paulo, Inst Fis, LNMS, BR-05315970 Sao Paulo, Brazil

[2] Inst Nacl Pesquisas Espaciais, Lab Assoiado Sensores & Mat, BR-12245970 Sao Jose Dos Campos, SP, Brazil

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 11期

基金：

巴西圣保罗研究基金会;

关键词：

D O I：

10.1063/1.1621738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Calculations using the dynamical theory of diffraction together with a sample model which considers the segregation of indium atoms were employed to fit the high-resolution x-ray spectra of strained InGaAs/GaAs quantum wells grown by molecular-beam epitaxy. The segregation coefficients obtained from the best fits to the experimental data of samples grown at different temperatures are in excellent agreement with the expected values and confirm that x-ray diffraction is a valuable tool for the investigation of the segregation phenomenon. (C) 2003 American Institute of Physics.

引用

收藏

页码：7050 / 7052

页数：3

相关论文

共 15 条

[1] X-RAY-DIFFRACTION OF MULTILAYERS AND SUPERLATTICES [J].

BARTELS, WJ ;

HORNSTRA, J ;

LOBEEK, DJW .

ACTA CRYSTALLOGRAPHICA SECTION A, 1986, 42 :539-545

[2] Reciprocal space maps of PbTe/SnTe superlattices [J].

Ferreira, SO ;

Abramof, E ;

Rappl, PHO ;

Ueta, AY ;

Closs, H ;

Boschetti, C ;

Motisuke, P ;

Bandeira, IN .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3650-3653

[3] X-ray analysis of In distribution in molecular beam epitaxy grown InGaAs/GaAs quantum well structures [J].

Fujimoto, S ;

Aoki, M ;

Horikoshi, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4A) :1872-1874

[4] Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001) [J].

García, JM ;

Silveira, JP ;

Briones, F .

APPLIED PHYSICS LETTERS, 2000, 77 (03) :409-411

[5] ENHANCED IN SURFACE SEGREGATION DURING MOLECULAR-BEAM EPITAXY OF (IN,GA)AS ON (H11) GAAS FOR SMALL VALUES OF H [J].

ILG, M ;

PLOOG, KH .

PHYSICAL REVIEW B, 1993, 48 (15) :11512-11515

[6] IMPROVED COMPOSITIONAL ABRUPTNESS AT THE INGAAS ON GAAS INTERFACE BY PRESATURATION WITH IN DURING MOLECULAR-BEAM EPITAXY [J].

KASPI, R ;

EVANS, KR .

APPLIED PHYSICS LETTERS, 1995, 67 (06) :819-821

[7] ORIGIN OF THE BLUE-SHIFT OBSERVED IN HIGHLY STRAINED (GA,IN)AS QUANTUM-WELLS GROWN ON GAAS(001) VICINAL SURFACES [J].

LEROUX, M ;

GRANDJEAN, N ;

DEPARIS, C ;

MASSIES, J ;

LOPEZ, C ;

MAYORAL, R ;

MESEGUER, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (7A) :3437-3441

[8] Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface [J].

Martini, S ;

Quivy, AA ;

Lamas, TE ;

da Silva, MJ ;

da Silva, ECF ;

Leite, JR .

JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :101-105

[9] Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy [J].

Martini, S ;

Quivy, AA ;

da Silva, ECF ;

Leite, JR .

APPLIED PHYSICS LETTERS, 2002, 81 (15) :2863-2865

[10] Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces [J].

Martini, S ;

Quivy, AA ;

Tabata, A ;

Leite, JR .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) :2280-2289