Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching

被引：339

作者：

Choi, Jaeho ^{[1
]}

Park, Sunghak ^{[1
]}

Lee, Joohee ^{[1
]}

Hong, Kootak ^{[1
]}

Kim, Do-Hong ^{[1
]}

Moon, Cheon Woo ^{[1
]}

Park, Gyeong Do ^{[1
]}

Suh, Junmin ^{[1
]}

Hwang, Jinyeon ^{[1
]}

Kim, Soo Young ^{[2
]}

Jung, Hyun Suk ^{[3
]}

Park, Nam-Gyu ^{[4
,5
]}

Han, Seungwu ^{[1
]}

Nam, Ki Tae ^{[1
]}

Jang, Ho Won ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

[2] Chung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 06974, South Korea

[3] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea

[4] Sungkyunkwan Univ, Sch Chem Engn, Suwon 16419, South Korea

[5] Sungkyunkwan Univ, Dept Energy Sci, Suwon 16419, South Korea

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 31期

基金：

新加坡国家研究基金会;

关键词：

METHYLAMMONIUM LEAD IODIDE; SOLAR-CELL; TRANSPORT; MECHANISMS; HYSTERESIS; TRIHALIDE; MEMORIES; ELECTRON; BEHAVIOR;

D O I：

10.1002/adma.201600859

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Organolead halide perovskites are used for low-operating-voltage multilevel resistive switching. Ag/CH3NH3PbI3/Pt cells exhibit electroforming-free resistive switching at an electric field of 3.25 x 10(3) V cm(-1) for four distinguishable ON-state resistance levels. The migration of iodine interstitials and vacancies with low activation energies is responsible for the low-electric-field resistive switching via filament formation and annihilation.

引用

页码：6562 / +

页数：7

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