Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM

被引：81

作者：

Cagli, C. ^{[1
]}

Buckley, J. ^{[1
]}

Jousseaume, V. ^{[1
]}

Cabout, T. ^{[1
]}

Salaun, A. ^{[1
]}

Grampeix, H. ^{[1
]}

Nodin, J. F. ^{[1
]}

Feldis, H. ^{[1
]}

Persico, A. ^{[1
]}

Cluzel, J. ^{[1
]}

Lorenzi, P. ^{[6
]}

Massari, L. ^{[6
]}

Rao, R. ^{[6
]}

Irrera, F. ^{[6
]}

Aussenac, F. ^{[1
]}

Carabasse, C. ^{[1
]}

Coue, M. ^{[1
]}

Calka, P. ^{[1
]}

Martinez, E. ^{[1
]}

Perniola, L. ^{[1
]}

Blaise, P. ^{[1
]}

Fang, Z. ^{[2
]}

Yu, Y. H.

Ghibaudo, G. ^{[2
,3
]}

Deleruyelle, D. ^{[4
]}

Bocquet, M.

Mueller, C. ^{[4
]}

Padovani, A. ^{[5
]}

Pirrotta, O. ^{[5
]}

Vandelli, L.

Larcher, L.

Reimbold, G. ^{[1
]}

de Salvo, B. ^{[1
]}

机构：

[1] MINATEC, CEA LETI, Grenoble, France

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Nanyang Ave, Singapore 639798, Singapore

[3] IMEP CNRS, MINATEC, Grenoble, France

[4] Univ Aix Marseille, IM2NP, UMR CNRS 6242, Marseille, France

[5] Univ Modena, DISMI, Reggio Emilia, Italy

[6] Univ Roma La Sapienza, Rome, Italy

来源：

2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2011年

关键词：

D O I：

10.1109/IEDM.2011.6131634

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the impact of Ti electrodes on the electrical behaviour of HfO2-based RRAM devices is conclusively clarified. To this aim, devices with Pt, TiN and Ti electrodes have been fabricated (see Fig. 1). We first provide several experiments to clearly demonstrate that switching is driven by creation-disruption of a conductive filament. Thus, the role of TiN/Ti electrodes is explained and modeled based on the presence of HfOx interfacial layer underneath the electrode. In addition, Ti is found responsible to activate bipolar switching. Moreover, it strongly reduces forming and switching voltages with respect to Pt-Pt devices. Finally, it positively impacts on retention. To support and interpret our results we provide physico-chemical measurements, electrical characterization, ab-initio calculations and modeling.

引用

页数：4

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