Orbital occupation in electron-charged CdSe quantum-dot solids

被引:57
作者
Houtepen, AJ [1 ]
Vanmaekelbergh, D [1 ]
机构
[1] Univ Utrecht, Debye Inst, NL-3508 TA Utrecht, Netherlands
关键词
D O I
10.1021/jp053103i
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have prepared high-quality assemblies of monodisperse CdSe quantum dots and employed a combination of electrochemical gating and electrical and optical techniques to study orbital occupation in these quantum-dot solids. Electron occupation in localized states is important in some cases and can be unambiguously distinguished from occupation of the nanocrystal eigenstates. In addition, all excitonic transitions show a red-shift in the transition energy, due to the presence of electron charge. We infer that the energy of the S electrons is determined by the quantum-confinement energy and by Coulomb repulsions of the S electron with all other electrons in the assembly. By using a simple electron-repulsion model, we explain observed differences in the electron-addition energy for different samples, the broadening of the electron occupation as a function of electrochemical potential, and the strong dependence of the electron-addition energy on nanocrystal diameter.
引用
收藏
页码:19634 / 19642
页数:9
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