Ru electrode deposited by sputtering in Ar/O2 mixture ambient

被引：10

作者：

Aoyama, T ^{[1
]}

Murakoshi, A ^{[1
]}

Imai, K ^{[1
]}

机构：

[1] Toshiba Corp, Microelect Engn Lab, ULSI Proc Engn Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 10期

关键词：

Ru; Si; O; interfacial layers; (Ba; Sr)TiO3; capacitor; electrode; contact resistance; amorphous layer; crystalline layer;

D O I：

10.1143/JJAP.37.5701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ru films are fabricated by de magnetron sputtering in an Ar/O-2 ambient, as the bottom electrodes of Ba0.5Sr0.5TiO3 thin film capacitors. The Ru films deposited on Si in an Ar/O-2 mixture ambient show low resistivity and low film stress and do not form Ru2Si3 following thermal processing even at 700 degrees C. It becomes clear that there exist very thin amorphous and crystalline layers composed of Ru, Si and O between the Ru films and Si in the case of Ru films deposited in an Ar/O-2 ambient. A low contact resistance at the Ru/n(+)-Si interface is obtained after annealing at 700 degrees C. An effective SiO2 film thickness of 0.42 nm is obtained for an actual Ba0.5Sr0.5TiO3 film thickness of 42 nm with a leakage current of less than I x 10(-8) A/cm(2) in the range between -1.5 V and +1.8 V for a Ru/Ba0.5Sr0.5TiO3/Ru/n(+)-Si capacitor without a barrier metal layer.

引用

页码：5701 / 5707

页数：7

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