TFEL devices using oxide thin films without vacuum process

Thin-film electroluminescent (TFEL) device fabrication using solution coating techniques which eliminate the need for vacuum processes have been demonstrated. The oxide phosphor thin-film emitting layer and the transparent conducting oxide thin-film electrode were prepared by this less expensive deposition process using metallic complex salts which are low in cost and easy to handle. TFEL devices with dip-coated ZnGa2O4:Mn, Ga2O3:Mn and CaGa2O4:Mn phosphor thin films were compared to devices with sputtered phosphor thin films. TFEL devices with a dip-coated ZnGa2O4:Mn or Ga2O3:Mn thin-film emitting layer exhibited higher luminance than equivalent devices with sputtered thin-film emitting layers. a luminance maximum above 750 or 1000 cd/m(2) in green emission, respectively, when driven at 1 kHz. (C) 1998 Elsevier Science S.A. All rights reserved.