Growth of Fe2O3 thin films by atomic layer deposition

被引：100

作者：

Lie, M ^{[1
]}

Fjellvåg, H ^{[1
]}

Kjekshus, A ^{[1
]}

机构：

[1] Univ Oslo, Dept Chem, N-0315 Oslo, Norway

来源：

THIN SOLID FILMS | 2005年 / 488卷 / 1-2期

关键词：

atomic layer deposition (ALD); iron(III) oxide films; thin films;

D O I：

10.1016/j.tsf.2005.04.063

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of alpha-Fe(2)A(3) (alpha-Al2O3-type crystal structure) and gamma-Fe2O3 (defect-spinel-type crystal structure) have been grown by the atomic layer deposition (ALD) technique with Fe(thd)(3) (iron derivative of Hthd=2,2,6,6-tetramethylheptane-3,5-dione) and ozone as precursors. It has been shown that an ALD window exists between 160 and 210 degrees C. The films have been characterized by various techniques and are shown to comprise (001)-oriented columns of alpha-Fe(2)A(3) with no in-plane orientation when gown on soda-lime-glass and Si(100) substrates. Good quality films have been made with thicknesses ranging from 10 to 130 nm. Films grown on alpha-Al2O3(001) and MgO(100) substrates have the alpha-Fe(2)A(3) and gamma-Fe(2)A(3) crystal structure, respectively, and consist of highly oriented columns with in-plane orientations matching those of the substrates. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：74 / 81

页数：8

共 22 条

[1] Fe termination for α-Fe2O3(0001) as grown by oxygen-plasma-assisted molecular beam epitaxy [J].