The high-k solution

In mid 1990s, Intel and other major chipmakers saw the saturation of capacity in the used of silicon dioxide (SiO2) gate insulator. Search for a replacement material is focused on the ability to concentrate an electric field with less current leak. Such material is called "high-k" dielectric or high strong capacity between two conducting plates. Several dielectric candidates have identified and tried but the results were discouraging. In turn, however, the problem lies not on the material but on the position process. Uneven surfaces leaving some gaps were found in sputtering and chemical vapor depositions where electric charges get stuck. A better deposition is found in a single layer of atoms and was introduced only in 2007. Intel has finally developed their metal gate transistors with hafnium-based material. This development had made to work on 45nm technology of which was an important breakthrough.