Diffusion, coalescence, and reconstruction of vacancy defects in graphene layers -: art. no. 205501

被引:454
作者
Lee, GD [1 ]
Wang, CZ
Yoon, E
Hwang, NM
Kim, DY
Ho, KM
机构
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea
[3] Seoul Natl Univ, Ctr Microstruct Sci Mat, Seoul 151742, South Korea
[4] Iowa State Univ, Ames Lab, Ames, IA 50011 USA
[5] Iowa State Univ, Dept Phys & Astron, Ames, IA 50011 USA
关键词
D O I
10.1103/PhysRevLett.95.205501
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Diffusion, coalescence, and reconstruction of vacancy defects in graphene layers are investigated by tight-binding molecular dynamics (TBMD) simulations and by first principles total energy calculations. It is observed in the TBMD simulations that two single vacancies coalesce into a 5-8-5 double vacancy at the temperature of 3000 K, and it is further reconstructed into a new defect structure, the 555-777 defect, by the Stone-Wales type transformation at higher temperatures. First principles calculations confirm that the 555-777 defect is energetically much more stable than two separated single vacancies, and the energy of the 555-777 defect is also slightly lower than that of the 5-8-5 double vacancy. In TBMD simulation, it is also found that the four single vacancies reconstruct into two collective 555-777 defects which is the unit for the hexagonal haeckelite structure proposed by Terrones et al.
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页数:4
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