First principles study of atomic-scale Al2O3 films as insulators for magnetic tunnel junctions

被引：6

作者：

Watari, N

Saito, M

Tsuge, H

Sugino, O

Ohnishi, S

机构：

[1] NEC Informatec Syst Ltd, Tsukuba, Ibaraki 3058501, Japan

[2] NEC Funct Mat Res Labs, Miyamae Ku, Kawasaki, Kanagawa 2168555, Japan

[3] NEC Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2000年 / 39卷 / 5B期

关键词：

density functional theory; magnetic tunnel junction; aluminum oxide; local density approximation; thin film;

D O I：

10.1143/JJAP.39.L479

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We performed density-functional calculations with Al/Al2O3/Al structures as models to study Al2O3 tunnel barriers for magnetic tunnel junctions. We found that aluminum oxide films thicker than 4.6 Angstrom have pseudogaps without substantial gap states, which suggests that these films have good insulating properties. This finding is consistent with an experimental result where a large magnetoresistance ratio was attained with a film thickness of about 8 Angstrom.

引用

页码：L479 / L481

页数：3

共 19 条

[1] PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].