Dc-transport properties of ferromagnetic (Ga,Mn)As semiconductors

被引：92

作者：

Jungwirth, T ^{[1
]}

Sinova, J

Wang, KY

Edmonds, KW

Campion, RP

Gallagher, BL

Foxon, CT

Niu, Q

MacDonald, AH

机构：

[1] Univ Texas, Dept Phys, Austin, TX 78712 USA

[2] Inst Phys ASCR, Prague 16253 6, Czech Republic

[3] Texas A&M Univ, Dept Phys, College Stn, TX 77843 USA

[4] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 02期

关键词：

D O I：

10.1063/1.1590433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the dc transport properties of (Ga,Mn)As diluted magnetic semiconductors with Mn concentration varying from 1.5% to 8%. Both diagonal and Hall components of the conductivity tensor are strongly sensitive to the magnetic state of these semiconductors. Transport data obtained at low temperatures are discussed theoretically within a model of band-hole quasiparticles with a finite spectral width due to elastic scattering from Mn and compensating defects. The theoretical results are in good agreement with measured anomalous Hall effect and anisotropic longitudinal magnetoresistance data. (C) 2003 American Institute of Physics.

引用

页码：320 / 322

页数：3

共 17 条

[1] Side-jump mechanism for the Hall effect of ferromagnets [J].