High-performance RF coil inductors on silicon

被引：11

作者：

Malba, V ^{[1
]}

Young, D ^{[1
]}

Ou, JJ ^{[1
]}

Bernhardt, AF ^{[1
]}

Boser, BE ^{[1
]}

机构：

[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

来源：

48TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 1998 PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ECTC.1998.678702

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strong demand for wireless communication devices has motivated research directed toward monolithic integration of transceivers. The fundamental electronic component least compatible with silicon integrated circuits is the inductor, although a number of inductors are required to implement oscillators, filters and matching networks in cellular devices. Spiral inductors have been integrated into the silicon IC metallization sequence but have not performed adequately due to coupling to the silicon which results in parasitic capacitance and loss. We have, for the first time, fabricated three dimensional coil inductors on silicon which have significantly lower capacitive coupling and loss and which now exceed the requirements of potential applications. Quality factors of 30 at 1 GHz have been measured in single turn devices and Q > 16 in 2 and 4 turn devices. The reduced Q for multiturn devices appears to be related to eddy currents in outer turns generated by magnetic fields from current in neighboring turns. Higher Q values significantly in excess of 30 are anticipated using modified coil designs.

引用

页码：252 / 255

页数：4