Transient radiation effects in CMOS/SOI transistors and circuits

被引：3

作者：

Ferlet-Cavrois, V ^{[1
]}

Dupont-Nivet, E ^{[1
]}

Vildeuil, JC ^{[1
]}

Musseau, O ^{[1
]}

Leray, JL ^{[1
]}

机构：

[1] CEA, F-91680 Bruyeres Le Chatel, France

来源：

RADECS 97: FOURTH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS | 1998年

关键词：

D O I：

10.1109/RADECS.1997.698938

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dose rate hardening of a CMOS/SOI technology is evaluated in this paper. The response of elementary transistors is studied with an original method by using a 2D drift-diffusion code. The photocurrent model is introduced in SPICE simulation to predict the sensitivity of complex circuits. A good agreement is observed between simulation and experiment. Simple rules to harden circuits are deduced from simulation.

引用

页码：360 / 365

页数：6