Energy level line-up in polymer light-emitting diodes via electroabsorption spectroscopy

被引:12
作者
Brown, TM [1 ]
Cacialli, F [1 ]
机构
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
来源
IEE PROCEEDINGS-OPTOELECTRONICS | 2001年 / 148卷 / 01期
关键词
D O I
10.1049/ip-opt:20010090
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The influence of carrier-injecting layers on the built-in potential of polymer light-emitting diodes (PLEDs) is analysed by means of electroabsorption spectroscopy. Two promising materials on which research has recently focused are: first. poly(ethylene-dioxythiophene)/ poly(styrene sulphonic acid) (PEDOT:PSS), a doped conducting polymer employed as hole injector; and secondly, lithium fluoride (LIF), which has been shown to enhance electron injection of Al-based cathodes, In the first samples LEDs with an indium tin oxide (ITO) anode were compared to those incorporating a PEDOT:PSS layer (in an ITO/PEDOT:PSS bilayer anode). In the second set of samples the comparison was between LEDs with an aluminium cathode and those incorporating a LiF layer tin an Al/LiF bilayer cathode) as a function of LiF thickness. Electroabsorption spectroscopy results supported by work function measurements clearly prove that both PEDOT:PSS and LiF introduce a large reduction in the barrier height at the anode and cathode interfaces, respectively. The ensuing enhancement in carrier injection is considered to be responsible for the marked improvement in device performance (lower operating voltages, higher luminous efficiencies and longer lifetimes).
引用
收藏
页码:74 / 80
页数:7
相关论文
共 47 条
[1]  
Ashcroft N. W., 1976, Solid State Physics, P553
[2]   RESONANT NONLINEAR OPTICAL SUSCEPTIBILITY - ELECTROREFLECTANCE IN LOW-FIELD LIMIT [J].
ASPNES, DE ;
ROWE, JE .
PHYSICAL REVIEW B, 1972, 5 (10) :4022-&
[3]   LiF/Al cathodes and the effect of LiF thickness on the device characteristics and built-in potential of polymer light-emitting diodes [J].
Brown, TM ;
Friend, RH ;
Millard, IS ;
Lacey, DJ ;
Burroughes, JH ;
Cacialli, F .
APPLIED PHYSICS LETTERS, 2000, 77 (19) :3096-3098
[4]   Built-in field electroabsorption spectroscopy of polymer light-emitting diodes incorporating a doped poly(3,4-ethylene dioxythiophene) hole injection layer [J].
Brown, TM ;
Kim, JS ;
Friend, RH ;
Cacialli, F ;
Daik, R ;
Feast, WJ .
APPLIED PHYSICS LETTERS, 1999, 75 (12) :1679-1681
[5]  
BROWN TN, UNPUB
[6]   LIGHT-EMITTING-DIODES BASED ON CONJUGATED POLYMERS [J].
BURROUGHES, JH ;
BRADLEY, DDC ;
BROWN, AR ;
MARKS, RN ;
MACKAY, K ;
FRIEND, RH ;
BURN, PL ;
HOLMES, AB .
NATURE, 1990, 347 (6293) :539-541
[7]   Efficient green light-emitting diodes from a phenylated derivative of poly(p-phenylene-vinylene) [J].
Cacialli, F ;
Friend, RH ;
Haylett, N ;
Daik, R ;
Feast, WJ ;
dosSantos, DA ;
Bredas, JL .
APPLIED PHYSICS LETTERS, 1996, 69 (25) :3794-3796
[8]   Transient and steady-state space-charge-limited currents in polyfluorene copolymer diode structures with ohmic hole injecting contacts [J].
Campbell, AJ ;
Bradley, DDC ;
Antoniadis, H ;
Inbasekaran, M ;
Wu, WSW ;
Woo, EP .
APPLIED PHYSICS LETTERS, 2000, 76 (13) :1734-1736
[9]   Direct measurement of conjugated polymer electronic excitation energies using metal/polymer/metal structures [J].
Campbell, IH ;
Hagler, TW ;
Smith, DL ;
Ferraris, JP .
PHYSICAL REVIEW LETTERS, 1996, 76 (11) :1900-1903
[10]   ELECTRICAL-IMPEDANCE MEASUREMENTS OF POLYMER LIGHT-EMITTING-DIODES [J].
CAMPBELL, IH ;
SMITH, DL ;
FERRARIS, JP .
APPLIED PHYSICS LETTERS, 1995, 66 (22) :3030-3032