Response to oxygen and chemical properties of SnO2 thin-film gas sensors

被引：28

作者：

Adamowicz, Boguslawa ^{[1
,2
]}

Izydorczyk, Weronika ^{[3
]}

Izydorczyk, Jacek ^{[3
]}

Klimasek, Andrzej ^{[1
,2
]}

Jakubik, Wieslaw ^{[1
,2
]}

Zywicki, Janusz ^{[4
]}

机构：

[1] Silesian Tech Univ, Inst Phys, Dept Appl Phys, PL-44100 Gliwice, Poland

[2] Silesian Tech Univ, Inst Phys, Dept Optoelect, PL-44100 Gliwice, Poland

[3] Silesian Tech Univ, Inst Elect, PL-44100 Gliwice, Poland

[4] High Tech Int Serv, Rome, Italy

来源：

VACUUM | 2008年 / 82卷 / 10期

关键词：

tin dioxide; RGTO technique; oxygen adsorption; surface electronic properties; solid-state gas sensors; Auger electron spectroscopy;

D O I：

10.1016/j.vacuum.2008.01.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The measurements of the response-in terms of the conductance changes-to oxygen adsorption of tin dioxide (SnO2) thin-film-based gas sensors were performed. The sensing SnO2 layers were obtained by means of the rheotaxial growth and thermal oxidation (RGTO) method. The sensor responses were measured under a dry gas flow containing oxygen in nitrogen, within the range of temperature from 25 to 540 degrees C. For comparison, similar studies were performed for a commercial SnO2 thick-film (TGS 812) gas sensor. The in-depth profiles of the chemical composition of the RGTO SnO2 layers were determined from the scanning Auger microprobe experiment. The changes in concentration ratios [O]/[Sn] and [C]/[Sn] from the near-surface region towards the grain bulk were shown. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：966 / 970

页数：5

共 16 条

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