First step towards the growth of single-crystal oxides on Si: Formation of a two-dimensional crystalline silicate on Si(001)

被引：59

作者：

Liang, Y ^{[1
]}

Gan, S ^{[1
]}

Engelhard, M ^{[1
]}

机构：

[1] Pacific NW Natl Lab, Richland, WA 99352 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 22期

关键词：

D O I：

10.1063/1.1415372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the structural and chemical properties of reconstructed Sr/Si(001) surfaces at different Sr coverages using low energy electron diffraction, x-ray photoelectron spectroscopy, and scanning tunneling microscopy. The results show that upon low temperature oxidation and subsequent UHV annealing of the Sr/Si(001)-(2x1) surface, a crystalline Sr2SiO4 silicate-like layer formed. Using this layer as a template, single-crystal SrO thin films were grown on Si(001) substrates. Our results provide microscopic and spectroscopic evidence of the formation of a uniform, stable, two-dimensional crystalline silicate that can be used for growth of single-crystal oxides on Si(001) substrates.

引用

页码：3591 / 3593

页数：3

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