Improvement in oxide thickness uniformity by repeated spike oxidation

被引：4

作者：

Hong, CC ^{[1
]}

Lee, CY ^{[1
]}

Hsieh, YL ^{[1
]}

Liu, CC ^{[1
]}

Fong, IK ^{[1
]}

Hwu, JG ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei, Taiwan

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2001年 / 14卷 / 03期

关键词：

oxide thickness uniformity; repeated spike oxidation; RTP;

D O I：

10.1109/66.939819

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new repeated spike oxidation (RSO) method used in a rapid thermal processing system was proposed in this work. Simulation results predict the temperature distribution on the wafer would be improved by this RSO method. We proposed that the improvement in wafer temperature uniformity is mainly caused by self-compensation in radiation heat absorption rate. Experimental data pointed out that the new method can produce more uniform oxide thickness than the conventional one under an intentionally created nonuniform heating environment.

引用

页码：227 / 230

页数：4

共 12 条

[1]

Campbell S. A., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P921, DOI 10.1109/IEDM.1990.237012

[2]

Chang Hsing-Chieh, 1998, THESIS NATL TAIWAN U

[3] DEVELOPMENT OF A HEXAGONAL-SHAPED RAPID THERMAL PROCESSOR USING A VERTICAL TUBE [J].