Hydrogen interaction with implantation induced point defects in p-type silicon

Interaction of hydrogen with implantation induced point defects in p-type Si has been monitored using deep level transient spectroscopy. H ions are implanted into p-Si using low doses in the range from 10(9) to 10(10) cm(-2). Vacancy and interstitial related defects are observed. Besides irradiation induced defects with levels at E-nu + 0.19 and E-nu + 0.35 eV, two additional defect levels at 0.28 and 0.51 eV above the valence band edge (E-nu) are resolved. They are identified as hydrogen related after comparison with He, B, and C implanted p-type Si. The generation of these defect levels, in the presence of hydrogen, has been studied as a function of ion dose, sample depth, and impurity content in the as grown Si. The level at E-nu + 0.19 eV shows a saturation effect for higher hydrogen doses. This is attributed to passivation by mobile hydrogen through the formation of neutral complexes. The level at E-nu + 0.51 eV has been assigned to be a complex involving H and B interstitials. (C) 1999 American Institute of Physics. [S0021-8979(99)01205-0].