New layer structure of phase change optical disk free from the initialization process

被引：2

作者：

Ogawa, S ^{[1
]}

Takeguchi, K ^{[1
]}

Morimoto, I ^{[1
]}

机构：

[1] Asahi Chem Ind Co Ltd, Cent Res Labs, Fuji, Shizuoka 4168501, Japan

来源：

OPTICAL DATA STORAGE '98 | 1998年 / 3401卷

关键词：

phase change; initialization-free; crystallization; DVD-RAM; GeSbTe; sputtering;

D O I：

10.1117/12.327942

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In general, phase change media have to be initialized prior to recording, Initialization for phase change optical disks involves crystallization of as-deposited amorphous recording films, An initialization-free technology will lead to a low production cost, which is very important for commercializing phase change optical disks. A crystallization assisted layer (CA layer) was deposited just before the sputtering of a recording layer GeSbTe. The CA layer is to assist to crystallize GeSbTe film during sputtering. We have confirmed by X-ray diffraction method that the recording layer was crystallized just after sputtering. Our proposed disk with CA layer show the similar performance to the 2.6GBytes digital video disk-random access memory (DVD-RAM) disk.

引用

页码：244 / 251

页数：8